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Austin Semiconductor, Inc. 512K x 32 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY SPECIFICATIONS
* *
* * * * * * *
AS8S512K32 & AS8S512K32A
PIN ASSIGNMENT (Top View)
68 Lead CQFP (Q) Military SMD Pinout Option
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
SRAM
SMD 5962-94611 (Military Pinout) MIL-STD-883
Operation with single 5V supply High speed: 17, 20, 25 and 35ns Built in decoupling caps for low noise Organized as 512Kx32 , byte selectable Low power CMOS TTL Compatible Inputs and Outputs Future offerings 3.3V Power Supply 15 ns Ultra High Speed
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15
FEATURES
OPTIONS
MARKINGS
XT IT
* Timing 17ns 20ns 25ns 35ns 45ns 55ns * Package Ceramic Quad Flatpack Pin Grid Array * Low Power Data Retention Mode * Pinout Military Commercial
-17 -20 -25 -35 -45 -55
Q P L
No.702 No.904
(no indicator) A
CS CS
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8S512K32 and AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as 512Kx32 bits. These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. This military temperature grade product is ideally suited for military and space applications.
CS
For more products and information please visit our web site at www.austinsemiconductor.com
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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I/O 31 A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A9 A8 A7 I/O 0
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O17 I/O18 I/O19 Vss I/O20 I/O21 I/O22 I/O23 Vcc I/O24 I/O25 I/O26 I/O27 Vss I/O28 I/O29 I/O30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O 16 A18 A17 CS4\ CS3\ CS2\ CS1\ NC Vcc NC NC OE\ WE\ A16 A15 A14 I/O 15
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
* Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC)
68 Lead CQFP Commercial Pinout Option (A)
Vcc A11 A12 A13 A14 A15 A16 CS1\ OE\ CS2 A17 WE2\ WE3\ WE4\ A18 NC NC I/O 14 I/O 13 I/O 12 Vss I/O 11 I/O 10 I/O 9 I/O 8 Vcc I/O 7 I/O 6 I/O 5 I/O 4 Vss I/O 3 I/O 2 I/O 1
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31
66 Lead PGA (P) Military SMD Pinout
\
CS
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
CS
CS\4
CS
CS\3
CS
512K x 8
M3
512K x 8
M2
CS\2
I/O 24 - I/O 31
I/O 16 - I/O 23
CS
512K x 8
M1
CS\1 WE\ OE\ A0 - A18
I/O 8 - I/O 15
512K x 8
M0
I/O 0 - I/O 7
MILITARY PINOUT/BLOCK DIAGRAM
COMMERCIAL PINOUT/BLOCK DIAGRAM
TRUTH TABLE
MODE Read Write(2) Standby OE\ L X X CE\ CS L L H WE\ H L X I/O DOUT DIN High Z POWER ACTIVE ACTIVE STANDBY
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss......................-.5V to +7V Storage Temperature............................................-65C to +150C Short Circuit Output Current(per I/O).................................20mA Voltage on Any Pin Relative to Vss....................-.5V to Vcc+1V Maximum Junction Temperature**...................................+150C *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
AS8S512K32 & AS8S512K32A
SRAM
This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more information.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%)
DESCRIPTION Input High (logic 1) Voltage Input Low (logic 1) Voltage Input Leakage Current ADD,OE Input Leakage Current WE, CE Output Leakage Current I/O Output High Voltage Output Low Voltage Supply Voltage CONDITIONS SYMBOL VIH VIL 0VDESCRIPTION
CONDITIONS
SYMBOL Icc
-17 700
-20 650
MAX -25 -35 600 570
-45 570
-55 UNITS NOTES 550 mA 3,13
CS\VIH; VCC = MAX Power Supply f = MAX = 1/ tRC (MIN) Current: Standby Outputs Open
ISBT1
240
240
190
190
150
150
mA
3, 13
CMOS Standby
VIN = VCC - 0.2V, or VSS +0.2V VCC=Max; f = 0Hz
ISBT2
80
80
80
80
80
80
mA
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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Austin Semiconductor, Inc.
CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1
SYMBOL CADD COE CWE, CCS CIO CWE ("A" version) PARAMETER A0 - A18 Capacitance OE\ Capacitance WE\ and CS\ Capacitance I/O 0- I/O 31 Capacitance WE\ Capacitance MAX 50 50 20 20 50
AS8S512K32 & AS8S512K32A
SRAM
UNITS pF pF pF pF pF
NOTE: 1. This parameter is sampled.
AC TEST CONDITIONS Test Specifications
Input pulse levels.........................................VSS to 3V Input rise and fall times.........................................5ns Input timing reference levels...............................1.5V Output reference levels........................................1.5V Output load..............................................See Figure 1
IOL
Current Source
Device Under Test
+
+
Vz = 1.5V (Bipolar Supply)
Ceff = 50pf
Current Source
IOH
NOTES: Vz is programmable from -2V to + 7V. IOL and IOH programmable from 0 to 16 mA. Vz is typically the midpoint of VOH and VOL. IOL and IOH are adjusted to simulate a typical resistive load circuit.
Figure 1
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTE 5) (-55oCDESCRIPTION
READ CYCLE READ cycle time Address access time Chip select access time Output hold from address change Chip select to output in Low-Z Chip select to output in High-Z Output enable access time Output enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip select to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width WRITE pulse width Data setup time Data hold time Write disable to output in Low-z Write enable to output in High-Z
SYMBOL
RC AA t ACS t OH t LZCS t HZCS t AOE t LZOE t HZOE
t t
MIN
17
-17 MAX
-20 MIN MAX
20
-25 MIN MAX
25
-35 MIN MAX
35
-45 MIN
45
-55 MAX MIN
55 45 45 55 55 2 2 20 20 20 20 0 20 20 55 25 25 2 1 25 25 20 0 2 15 15
MAX
UNITS NOTES
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
17 17 2 2 9 9 0 12 17 15 15 2 1 15 15 12 0 2 9 20 15 15 2 1 15 15 10 0 2 0 2 2
20 20 2 2 10 10 0 12 25 17 17 2 1 17 17 12 0 2 11
25 25 2 2 12 12 0 12 35 20 20 2 1 20 20 15 0 2 13
35 35 2 2 15 15 0 15 45 25 25 2 1 25 25 20 0 2 15
4,6,7 4,6,7 4,6 4,6
WC CW AW t AS t AH t WP1 t WP2 t DS t DH t LZWE t HZWE
t t
t
4,6,7 4,6,7
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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ADDRESS
tOH
4311 4121 2 3 5 435132121 14321 24 41 3 431132121 24 43 5
tRC
DATA I/O
ADDRESS
PREVIOUS DATA VALID
READ CYCLE NO. 2
READ CYCLE NO. 1
tAA
tAA
665430 7 21 7543229 654321187654321 654329 210 7654329 665431187654321 210 754322187654321 654321187654321 210 0 7654329 654321187654321 2119 6543276 98 654321654321 7654326 987 765432154321 654321154321 987 754321154321 654321154321 987 7 7654316 6654326 982
tHZCS
2109876544321 5321 432 54321 2109876543211 321 2109876544321 54321 432 2109876554321 4321 2109876543211 876543211 432 876544321 5432 432 876543211 53211 876554321 44321 5321 432 876543211
OE\
CS\
t tLZCS ACS
tAOE tLZOE
34 4311121 22 3 4331121 121 243 4331121 121 243 4311121 221 343
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AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
DATA I/O
HIGH IMPEDANCE
6 tRC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
DATA VALID
DATA VALID
tHZOE
AS8S512K32 & AS8S512K32A
SRAM
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
WRITE CYCLE NO. 1
(Chip Select Controlled)
t WC ADDRESS t AW tCW t WP1 1 tHZWE tDS tAH
CS\
tAS
WE\ DATA I/O
DATA VALID
WRITE CYCLE NO. 2
(Write Enable Controlled)
tWC ADDRESS t AW
WE\ DATA I/O
tDS
DATA VALID
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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654320 543210 21 654320 543211987654321 654321987654321 543211987654321 654320 543211987654321 21
87654321 87654321 87654321 87654321 654321 654321 654321 654321
CS\
tAS
tCW t WP2 1
tAH
tDH
4321 4321 432 4321 43211 432 43211 43211 432
5432109 76543 7654309 543212187654321 21 765432187654321 543212187654321 2109 743212187654321 543212187654321 5654309 7654309 21
tLZWE tDH
4311210987654321 23 1 4 4341210987654321 13 2 4311210987654321 23 4
654321 654321 654321 654321
8765432121 6543 43432 43 21 8765654321 654321 8765432121 434321 21 8765654321 6543 1 8765432121
Austin Semiconductor, Inc.
NOTES
1. All voltages referenced to VSS (GND). 2. -2V for pulse width <20ns. 3. ICC is dependent on output loading and cycle rates. unloaded, and f= 1 t RC(MIN) HZ.
AS8S512K32 & AS8S512K32A
SRAM
The specified value applies with the outputs 4. This parameter guaranteed but not tested. 5. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCS, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. Transition is measured +/- 200 mV typical from steady state voltage, allowing for actual tester RC time constant.
7. At any given temperature and voltage condition, tHZCS, is less than tLZCS, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip selects and output enable are held in their active state. 10. Address valid prior to or coincident with latest occurring chip enable. 11. tRC= READ cycle time. 12. Chip enable (CS\) and write enable (WE\) can initiate and terminate a WRITE cycle. 13. ICC is for 32 bit mode.
LOW POWER CHARACTERISTICS (L Version Only)

"

" # $ % $ % &' $ %

!!
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V VDR>2V
t
4.5V
CDR
t
R
CS\ 1-4
VDR
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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87654 54321321 876543210987654321 543213210987654321 87654 87654 57651 87654321 543213210987654321 843243210987654321 543213210987654321 87654 87651 57654321 87654 4 843243210987654321 543213210987654321 543213210987654321 87654321 8765
876543210987654321 87654321 54321 876543210987654321 876543210987654321 8765432 876543210987654321 876543210987654321 54321 1 876543210987654321 87654321 87654321 54321 876543210987654321 876543210987654321 54321
Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
MECHANICAL DEFINITIONS*
ASI Case #702 (Package Designator Q) SMD 5962-94611, Case Outline M
4 x D2 4 x D1 D
DETAIL A
R
1o - 7o
b
L1
B
e
SEE DETAIL A A1 A A2 E
SMD SPECIFICATIONS SYMBOL A A1 A2 B b D D1 D2 E e R L1 MIN 0.123 0.118 0.000 0.010 REF 0.013 0.800 BSC 0.870 0.980 0.936 0.050 BSC 0.005 0.035 --0.045 0.890 1.000 0.956 0.017 MAX 0.200 0.186 0.020
*All measurements are in inches.
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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Austin Semiconductor, Inc.
AS8S512K32 & AS8S512K32A
SRAM
MECHANICAL DEFINITIONS*
ASI Case #904 (Package Designator P ) SMD 5962-94611, Case Outline T
4xD D1 Pin 56 D2 Pin 1
(identified by 0.060 square pad)
A A1
b1
E1
e
b
Pin 66
e
Pin 11
L
SMD SPECIFICATIONS SYMBOL A A1 b b1 D D1/E1 D2 e L MIN 0.144 0.025 0.016 0.045 1.065 1.000 TYP 0.600 TYP 0.100 TYP 0.145 0.155 MAX 0.181 0.035 0.020 0.055 1.085
*All measurements are in inches.
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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AS8S512K32 & AS8S512K32A
SRAM
ORDERING INFORMATION
EXAMPLE: AS8S512K32Q-25L/XT Device Number AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 Options** A A A A A A Package Type Q Q Q Q Q Q Speed ns -17 -20 -25 -35 -45 -55 Options** L L L L L L Process /* /* /* /* /* /*
EXAMPLE: AS8S512K32AP-25/XT Device Number AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 AS8S512K32 Options** A A A A A A Package Type P P P P P P Speed ns -17 -20 -25 -35 -45 -55 Options** L L L L L L Process /* /* /* /* /* /*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range XT = Extended Temperature Range 833C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC
**DEFINITION OF OPTIONS
A = Commercial Pinout no indicator = Military Pinout L = Low Power Data Retention Mode
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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AS8S512K32 & AS8S512K32A
SRAM
ASI TO DSCC PART NUMBER CROSS REFERENCE
Package Designator Q
ASI Part #
AS8S512K32Q-17L/883C AS8S512K32Q-17L/883C AS8S512K32Q-20L/883C AS8S512K32Q-20L/883C AS8S512K32Q-25L/883C AS8S512K32Q-25L/883C AS8S512K32Q-35L/883C AS8S512K32Q-35L/883C AS8S512K32Q-45L/883C AS8S512K32Q-45L/883C AS8S512K32Q-55L/883C AS8S512K32Q-55L/883C AS8S512K32Q-17/883C AS8S512K32Q-17/883C AS8S512K32Q-20/883C AS8S512K32Q-20/883C AS8S512K32Q-25/883C AS8S512K32Q-25/883C AS8S512K32Q-35/883C AS8S512K32Q-35/883C AS8S512K32Q-45/883C AS8S512K32Q-45/883C AS8S512K32Q-55/883C AS8S512K32Q-55/883C
Package Designator P
ASI Part #
AS8S512K32P-17L/883C AS8S512K32P-17L/883C AS8S512K32P-20L/883C AS8S512K32P-20L/883C AS8S512K32P-25L/883C AS8S512K32P-25L/883C AS8S512K32P-35L/883C AS8S512K32P-35L/883C AS8S512K32P-45L/883C AS8S512K32P-45L/883C AS8S512K32P-55L/883C AS8S512K32P-55L/883C AS8S512K32P-17/883C AS8S512K32P-17/883C AS8S512K32P-20/883C AS8S512K32P-20/883C AS8S512K32P-25/883C AS8S512K32P-25/883C AS8S512K32P-35/883C AS8S512K32P-35/883C AS8S512K32P-45/883C AS8S512K32P-45/883C AS8S512K32P-55/883C AS8S512K32P-55/883C
SMD Part #
5962-9461110HMA 5962-9461110HMC 5962-9461109HMA 5962-9461109HMC 5962-9461108HMA 5962-9461108HMC 5962-9461107HMA 5962-9461107HMC 5962-9461106HMA 5962-9461106HMC 5962-9461105HMA 5962-9461105HMC 5962-9461116HMA 5962-9461116HMC 5962-9461115HMA 5962-9461115HMC 5962-9461114HMA 5962-9461114HMC 5962-9461113HMA 5962-9461113HMC 5962-9461112HMA 5962-9461112HMC 5962-9461111HMA 5962-9461111HMC
SMD Part #
5962-9461110HTA 5962-9461110HTC 5962-9461109HTA 5962-9461109HTC 5962-9461108HTA 5962-9461108HTC 5962-9461107HTA 5962-9461107HTC 5962-9461106HTA 5962-9461106HTC 5962-9461105HTA 5962-9461105HTC 5962-9461116HTA 5962-9461116HTC 5962-9461115HTA 5962-9461115HTC 5962-9461114HTA 5962-9461113HTC 5962-9461113HTA 5962-9461113HTC 5962-9461112HTA 5962-9461112HTC 5962-9461111HTA 5962-9461111HTC
AS8S512K32 & AS8S512K32A Rev. 3.0 6/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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